​Laser characteristics of sapphire crystal (3)

Laser characteristics of sapphire crystal (3)

The strength of the sapphire crystal facets can be increased by reducing the defect depth adjacent to the surface layer. In particular, the surface damage thresholds (relative units) are 0.47; 1.0; 2.5 and 4 for thicknesses of 5, 2, 0.03 and 0 μm, respectively.

To a lesser extent, the surface damage threshold is determined by the crystal orientation. 90º rotation of the crystal facets based on the laser beam polarization vector does not affect the bottom damage threshold, but for facets this value changes by a factor of 1.3-1.5. Such a difference can be This is explained by the redistribution of polarized radiation between microcracks that develop mainly along the C-axis and other defects in the adjacent layers of the surface.

When the radiation intensity is close to the surface sublimation energy threshold density, the main damage mechanism of the output surface becomes the sublimation of the maximum local energy area. When irradiated by a single-pulse ruby laser with an energy density of 0.5 GW/cm2 and tp=30 ns, Estimates of the threshold sublimation energy at the output end face indicate an energy density threshold of 20 J/cm2. The output end face is often destroyed at lower energies relative to the input end face.

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