Electrical properties of sapphire crystals

Electrical properties of sapphire crystals

At room temperature, sapphire is one of the best dielectrics. The electrical to characteristic (χ) can be described by the following formula:

χ=χ1 exp(-E1*/kT) +χ2exp(-E2*/kT) (2.8)

Here E1* and E2* are the activation and transformation energies of charge carriers. The activation and transformation energies from low temperature and high temperature are 2.25 and 5.50 eV, respectively. The resistance (ω) is temperature dependent.

Additional data can be found in various sapphire manufacturers' catalogs. For example, the reported lower bulk resistance at 298 K is equal to 1014 Ωm, which is in the order of magnitude of the values listed in Table 2.13, while the value reported in other catalogs is 1016 Ωm. The reported values of ω are equal to 1011 and 106 Ωm for 773 and 1,273 K, respectively. However, it should be noted that it is not yet certain that these data are correct.

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